Invention Application
US20160042793A1 LOW-POWER NONVOLATILE MEMORY CELLS WITH SELECT GATES 有权
具有选择门的低功率非易失性存储器单元

  • Patent Title: LOW-POWER NONVOLATILE MEMORY CELLS WITH SELECT GATES
  • Patent Title (中): 具有选择门的低功率非易失性存储器单元
  • Application No.: US14456965
    Application Date: 2014-08-11
  • Publication No.: US20160042793A1
    Publication Date: 2016-02-11
  • Inventor: Leonard Forbes
  • Applicant: Empire Technology Development LLC
  • Main IPC: G11C16/06
  • IPC: G11C16/06
LOW-POWER NONVOLATILE MEMORY CELLS WITH SELECT GATES
Abstract:
Technologies are generally described for low-power nonvolatile memory cells configured with select gates. A nonvolatile memory cell may have a transistor body, a select gate and a floating gate both coupled to the body, and a control gate coupled to the floating gate. Charge stored on the floating gate may indicate the data stored on the memory cell, and the control gate may be configured to adjust the charge stored on the floating gate. The select gate may be used to adjust the state of the transistor body to facilitate the adjustment of charge on the floating gate, and may also be used to render the memory cell unresponsive to the control gate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0