Invention Application
- Patent Title: INTEGRATED CIRCUITS AND FABRICATION METHODS THEREOF
- Patent Title (中): 集成电路及其制造方法
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Application No.: US14886221Application Date: 2015-10-19
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Publication No.: US20160043162A1Publication Date: 2016-02-11
- Inventor: Yuan-Fu CHUNG , Chu-Wei HU , Yuan-Hung CHUNG
- Applicant: MediaTek Inc.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/265 ; H01L29/167 ; H01L21/324 ; H01L21/268 ; H01L21/266 ; H01L29/06 ; H01L27/06 ; H01L21/8234 ; H01L21/02 ; H01L21/28
Abstract:
A method of fabricating an integrated circuit is also provided. The method includes forming a first polysilicon region having an initial grain size on a substrate. The first polysilicon region is implanted with a first dopant of a first conductivity type and a second dopant. After the implantation, the first polysilicon region has a first grain size larger than the initial grain size. Then, a laser rapid thermal annealing process is performed to the first polysilicon region.
Public/Granted literature
- US09508786B2 Integrated circuits and fabrication methods thereof Public/Granted day:2016-11-29
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