Driving a back-gate of a transistor with a follower signal that corresponds to an information signal. At least some of the illustrative embodiments are methods including: passing an information signal from a source terminal to an drain terminal of a main field effect transistor (FET), the information signal has a peak-to-peak voltage; generating a follower signal that corresponds to the information signal, the follower signal electrically isolated from the information signal, and the follower signal has a peak-to-peak voltage lower than the peak-to-peak voltage of the information signal; and applying the follower signal to a back-gate of the main FET.