Invention Application
- Patent Title: INTEGRATED CLUSTER TO ENABLE NEXT GENERATION INTERCONNECT
- Patent Title (中): 集成集群以实现下一代互连
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Application No.: US14923957Application Date: 2015-10-27
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Publication No.: US20160049331A1Publication Date: 2016-02-18
- Inventor: Mehul B. NAIK , Abhijit Basu MALLICK , Kiran V. THADANI , Zhenjiang CUI
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.
Public/Granted literature
- US09318383B2 Integrated cluster to enable next generation interconnect Public/Granted day:2016-04-19
Information query
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