公开(公告)号：US20140091417A1

公开(公告)日：2014-04-03

申请号：US14040624

申请日：2013-09-28

Applicant: Applied Materials, Inc.

Inventor： Sum-Yee Betty TANG ,  Martin SEAMONS ,  Kiran V. THADANI ,  Abhijit MALLICK

IPC: C09D5/00 ,  H01L31/18 ,  H01L31/0232

CPC classification number: C09D5/006 ,  C23C16/30 ,  C23C16/452 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02325 ,  H01L31/105 ,  H01L31/18

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract translation: 在衬底上的光活性特征上沉积低折射率涂层的方法包括在其上形成具有一个或多个光活性特征的衬底并将衬底放置在工艺区中。 沉积气体在远程气体激发器中通电，沉积气体包括碳氟化合物气体和添加气体。 远程激活的沉积气体流入工艺区域以在衬底上沉积低折射率涂层。

公开(公告)号：US20150140833A1

公开(公告)日：2015-05-21

申请号：US14153586

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Kiran V. THADANI ,  Abhijit Basu MALLICK ,  Nitin INGLE

IPC: H01L21/02

CPC classification number: H01L21/02219 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67742

Abstract: Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer.

Abstract translation: 本发明的实施方案一般涉及形成耐蚀刻硅 - 碳 - 氮层的方法。 所述方法通常包括在存在等离子体的情况下在处理室的处理区域中活化含硅前体和含氮前体，并使用活化的含硅物质在衬底上沉积薄的可流动的硅 - 碳 - 氮材料 前体和含氮前体。 随后使用各种固化技术之一固化薄的可流动的硅 - 碳 - 氮材料。 顺序沉积多个薄的可流动的硅 - 碳 - 氮材料层以产生最终层。

公开(公告)号：US20160181089A1

公开(公告)日：2016-06-23

申请号：US14954634

申请日：2015-11-30

Applicant: Applied Materials, Inc.

Inventor： Jingmei LIANG ,  Kiran V. THADANI ,  Jessica S. KACHIAN ,  Nagarajan RAJAGOPALAN

IPC: H01L21/02

CPC classification number: B81B3/00 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02315

Abstract: A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

Abstract translation: 减少具有柱的基体的线弯曲和表面粗糙度的方法包括通过用基团处理含柱基底来形成处理表面。 该基团可以是硅基，氮基或氧基。 该方法可以包括通过使有机硅前体和氧前体反应而在处理过的表面上形成电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 减少具有柱的基板的线弯曲和表面粗糙度的方法包括通过使有机硅前体，氧前体和自由基前体反应形成在含柱底物上的电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 自由基前体可以选自氮基自由基前体，氧基自由基前体和硅基自由基前体。

公开(公告)号：US20160049331A1

公开(公告)日：2016-02-18

申请号：US14923957

申请日：2015-10-27

Applicant: Applied Materials, Inc.

Inventor： Mehul B. NAIK ,  Abhijit Basu MALLICK ,  Kiran V. THADANI ,  Zhenjiang CUI

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

Abstract translation: 本发明的实施例一般涉及用于形成金属结构和钝化层的方法。 在一个实施例中，在衬底上形成金属柱。 金属柱掺杂有锰，铝，锆或铪。 介电材料沉积在金属柱之上和之间，然后固化以在金属柱的垂直表面上形成钝化层。

公开(公告)号：US20150214039A1

公开(公告)日：2015-07-30

申请号：US14590624

申请日：2015-01-06

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/68742 ,  H01L21/68792

Abstract: Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0° C. and about 200° C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

Abstract translation: 本文描述的实现方式通常涉及电介质间隙填充的方法。 在一个实施方案中，提供了在衬底上沉积氧化硅层的方法。 该方法包括将环状有机硅氧烷前体和脂族有机硅氧烷前体引入沉积室，使环状有机硅氧烷前体与脂族有机硅氧烷前体与原子氧反应，在位于沉积室中的基底上形成氧化硅层， 其中当形成氧化硅层时，所述衬底保持在约0℃至约200℃之间的温度，其中所述氧化硅层在沉积后最初可流动，并且其中所述循环 有机硅氧烷前体与脂族有机硅氧烷前体的流速为至少2:1，并固化沉积的氧化硅层。

公开(公告)号：US20150196933A1

公开(公告)日：2015-07-16

申请号：US14574101

申请日：2014-12-17

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: B05D3/06 ,  B05D3/02 ,  B05D3/04

CPC classification number: H01L21/02216 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas.

Abstract translation: 本发明的实施方案一般涉及固化含碳/含硅低k材料的方法。 所述方法通常包括将沉积前体输送到处理区域，沉积前体包括含碳/硅的前体，在含氧前体存在下形成远程等离子体，将活化的含氧前体输送到沉积前体以沉积 在基底上的含碳/硅的低k材料，并在碳氧化物气体存在下固化碳/含硅低k材料。