Invention Application
- Patent Title: CIRCUIT ELEMENT INCLUDING A LAYER OF A STRESS-CREATING MATERIAL PROVIDING A VARIABLE STRESS
- Patent Title (中): 电路元件，包括提供可变应力的应力创建材料层
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Application No.: US14933557Application Date: 2015-11-05
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Publication No.: US20160056288A1Publication Date: 2016-02-25
- Inventor: Johannes von Kluge
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G05F3/26 ; H03K19/20 ; H01L27/092
Abstract:
An integrated circuit includes a first transistor having a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, the first stress-creating material providing a stress that is variable in response to a signal acting on the first stress-creating material, wherein the first layer of the first stress-creating material is arranged to provide a first variable stress in the first channel region of the first transistor, the first variable stress being variable in response to a first signal acting on the first stress-creating material. The integrated circuit also includes a second transistor having a second source region, a second drain region, a second channel region, and a second gate electrode.
Public/Granted literature
- US09537006B2 Circuit element including a layer of a stress-creating material providing a variable stress Public/Granted day:2017-01-03
Information query
IPC分类:
