发明申请
US20160064265A1 TEMPORARILY BONDING SUPPORT SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
临时接合支撑基板和半导体器件制造方法

  • 专利标题: TEMPORARILY BONDING SUPPORT SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
  • 专利标题(中): 临时接合支撑基板和半导体器件制造方法
  • 申请号: US14634389
    申请日: 2015-02-27
  • 公开(公告)号: US20160064265A1
    公开(公告)日: 2016-03-03
  • 发明人: Kenro NAKAMURA
  • 申请人: KABUSHIKI KAISHA TOSHIBA
  • 申请人地址: JP Tokyo
  • 专利权人: KABUSHIKI KAISHA TOSHIBA
  • 当前专利权人: KABUSHIKI KAISHA TOSHIBA
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2014-173146 20140827
  • 主分类号: H01L21/683
  • IPC分类号: H01L21/683
TEMPORARILY BONDING SUPPORT SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要:
According to one embodiment, there is provided a temporarily bonding support substrate including an underlayer and a heat generable layer. A device substrate is to be temporarily bonded to the heat generable layer on an opposite side of the underlayer.
信息查询
0/0