Invention Application
US20160064277A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING NANOWIRES 有权
使用纳米线制造半导体器件的方法

METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING NANOWIRES
Abstract:
Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
Public/Granted literature
Information query
Patent Agency Ranking
0/0