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公开(公告)号：US09153590B2
公开(公告)日：2015-10-06
申请号：US14297220
申请日：2014-06-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han-Jin Lim , Won-Seok Yoo , Seok-Woo Nam
IPC: G11C11/00 , H01L27/108
CPC classification number: H01L27/10814 , H01L27/10823 , H01L27/10855
Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括由形成在单元区域中的器件隔离层限定的有源区，在有源区中包括掩埋栅的晶体管，形成在位于掩埋栅的一侧的有源区上的金属接触， 在金属接触件上，在着陆焊盘上形成电连接到有源区的电容器，以及在金属触点和有源区之间的金属氧化物层。
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公开(公告)号：US20140367774A1
公开(公告)日：2014-12-18
申请号：US14294412
申请日：2014-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-Ryeol Yoo , Jun-Noh Lee , Dong-Chan Kim , Han-Jin Lim
IPC: H01L29/423 , H01L29/49
CPC classification number: H01L29/4236 , H01L27/10876 , H01L29/4966 , H01L29/4983
Abstract: Semiconductor devices are provided including a first trench in a semiconductor substrate; a first insulating film in the first trench; a first conductive film on the first insulating film, the first conductive film having upper and lower portions and filling at least a portion of the first trench; and a first work function adjustment film having first and second portions, a first lower work function adjustment film portion and a first upper work function adjustment portion. The first lower work function adjustment film portion overlaps the lower portion of the first conductive film and the first upper work function adjustment film portion overlaps the upper portion of the first conductive film between the first insulating film and the first conductive film.
Abstract translation: 提供半导体器件，其包括半导体衬底中的第一沟槽; 第一沟槽中的第一绝缘膜; 在所述第一绝缘膜上的第一导电膜，所述第一导电膜具有上部和下部并填充所述第一沟槽的至少一部分; 以及具有第一和第二部分的第一功能调整膜，第一下部功能调整膜部分和第一上部功能调整部分。 第一下功函数调整膜部与第一导电膜的下部重叠，第一上功函调整膜部与第一绝缘膜与第一导电膜之间的第一导电膜的上部重叠。
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3.发明申请公开(公告)号：US20190131301A1
公开(公告)日：2019-05-02
申请号：US16220109
申请日：2018-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC: H01L27/092 , H01L27/108 , H01L21/28 , H01L29/49 , H01L29/423 , H01L21/8238 , H01L29/66 , H01L29/10
CPC classification number: H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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4.发明申请公开(公告)号：US20160247802A1
公开(公告)日：2016-08-25
申请号：US15139360
申请日：2016-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC: H01L27/092 , H01L29/423 , H01L21/28 , H01L27/108 , H01L29/49 , H01L21/8238
CPC classification number: H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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公开(公告)号：US20160064277A1
公开(公告)日：2016-03-03
申请号：US14674332
申请日：2015-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun PARK , Dong-Hyun Im , Soon-Gun Lee , Jong-Myeong Lee , Han-Jin Lim
IPC: H01L21/768 , H01L49/02
CPC classification number: H01L21/76837 , B82Y10/00 , B82Y40/00 , H01L21/02532 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L21/76802 , H01L21/76816 , H01L21/7682 , H01L21/76844 , H01L21/76877 , H01L21/76885 , H01L21/76889 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L28/91 , H01L29/413 , H01L2221/1094
Abstract: Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
Abstract translation: 制造半导体器件的方法可以包括形成引导图案，其暴露基底图案，通过执行第一纳米线生长工艺在基底图案上形成第一纳米线，在第一纳米线之间形成第一模制绝缘层， 去除纳米线，并在孔中形成包括导电材料的第一电极。
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Patent Agency Ranking
公开(公告)号：US20150124521A1
公开(公告)日：2015-05-07
申请号：US14297220
申请日：2014-06-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han-Jin Lim , Won-Seok Yoo , Seok-Woo Nam
IPC: H01L27/108 , G11C11/4063
CPC classification number: H01L27/10814 , H01L27/10823 , H01L27/10855
Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括由形成在单元区域中的器件隔离层限定的有源区，在有源区中包括掩埋栅的晶体管，形成在位于掩埋栅的一侧的有源区上的金属接触， 在金属接触件上，在着陆焊盘上形成电连接到有源区的电容器，以及在金属触点和有源区之间的金属氧化物层。
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公开(公告)号：US09543196B2
公开(公告)日：2017-01-10
申请号：US14674332
申请日：2015-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Park , Dong-Hyun Im , Soon-Gun Lee , Jong-Myeong Lee , Han-Jin Lim
IPC: H01L21/20 , H01L21/82 , H01L21/768 , B82Y10/00 , H01L21/02 , H01L27/108 , H01L49/02 , H01L29/41
CPC classification number: H01L21/76837 , B82Y10/00 , B82Y40/00 , H01L21/02532 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L21/76802 , H01L21/76816 , H01L21/7682 , H01L21/76844 , H01L21/76877 , H01L21/76885 , H01L21/76889 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L28/91 , H01L29/413 , H01L2221/1094
Abstract: Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
Abstract translation: 制造半导体器件的方法可以包括形成引导图案，其暴露基底图案，通过执行第一纳米线生长工艺在基底图案上形成第一纳米线，在第一纳米线之间形成第一模制绝缘层， 去除纳米线，并在孔中形成包括导电材料的第一电极。
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8.发明授权Capacitors including amorphous dielectric layers and methods of forming the same 有权包括非晶介质层的电容器及其形成方法公开(公告)号：US09437420B2
公开(公告)日：2016-09-06
申请号：US14688564
申请日：2015-04-16
Applicant: Samsung Electronics Co., Ltd. , NaMLab gGmbH
Inventor： Kyu-Ho Cho , Youn-Soo Kim , Han-Jin Lim , Steve Knebel , Uwe Schroeder
IPC: H01L21/00 , H01L21/02 , H01L27/108 , H01L49/02
CPC classification number: H01L21/02192 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L27/10885 , H01L27/10894 , H01L28/40
Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.
Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。
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9.发明申请CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FORMING THE SAME 有权包括非晶介质层的电容器及其形成方法公开(公告)号：US20150357399A1
公开(公告)日：2015-12-10
申请号：US14688564
申请日：2015-04-16
Applicant: Samsung Electronics Co., Ltd. , NaMLab gGmbH
Inventor： Kyu-Ho Cho , Youn-Soo Kim , Han-Jin Lim , Steve Knebel , Uwe Schroeder
CPC classification number: H01L21/02192 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L27/10885 , H01L27/10894 , H01L28/40
Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.
Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。
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公开(公告)号：US09646971B2
公开(公告)日：2017-05-09
申请号：US15162912
申请日：2016-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Hyun Im , Han-Jin Lim , Jin-Won Ma , Kong-Soo Lee , Ki-Vin Im
IPC: H01L27/108 , H01L23/535 , H01L23/528 , H01L23/532 , H01L23/522 , H01L29/06
CPC classification number: H01L27/10814 , B82Y10/00 , H01L23/5226 , H01L23/528 , H01L23/53257 , H01L23/53261 , H01L23/53271 , H01L23/535 , H01L27/10823 , H01L27/10852 , H01L28/90 , H01L29/0676 , H01L29/66439 , H01L29/775
Abstract: Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.
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