发明申请
US20160064407A1 SEMICONDUCTOR DEVICES HAVING GATE STACK PORTIONS THAT EXTEND IN A ZIGZAG PATTERN
有权
具有在ZIGZAG图案中扩展的门盖堆叠部件的半导体器件
- 专利标题： SEMICONDUCTOR DEVICES HAVING GATE STACK PORTIONS THAT EXTEND IN A ZIGZAG PATTERN
- 专利标题（中）： 具有在ZIGZAG图案中扩展的门盖堆叠部件的半导体器件
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申请号： US14676843申请日： 2015-04-02
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公开(公告)号： US20160064407A1公开(公告)日： 2016-03-03
- 发明人: Hyuk Kim , Sang Wuk Park , Kyoung Sub Shin
- 申请人： Hyuk Kim , Sang Wuk Park , Kyoung Sub Shin
- 优先权： KR10-2014-0116462 20140902
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L29/78 ; H01L27/02 ; H01L29/792
摘要：
A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.
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