Invention Application
- Patent Title: SUBSTRATE OF SEMICONDUCTOR DEVICE INCLUDING EPITAXAL LAYER AND SILICON LAYER HAVING SAME CRSTALLINE ORIENTATION
- Patent Title (中): 包括外延层的半导体器件的衬底和具有相同晶体取向的硅层
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Application No.: US14469566Application Date: 2014-08-26
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Publication No.: US20160064485A1Publication Date: 2016-03-03
- Inventor: Wen-Yin Weng , Cheng-Tung Huang , Ya-Ru Yang , Yi-Ting Wu , Yu-Ming Lin , Jen-Yu Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/165 ; H01L29/66 ; H01L29/16
Abstract:
A method for fabricating substrate of a semiconductor device is disclosed. The method includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation.
Public/Granted literature
Information query
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