发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14509070申请日： 2014-10-08
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公开(公告)号： US20160064528A1公开(公告)日： 2016-03-03
- 发明人: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Feng-Yi Chang
- 申请人： UNITED MICROELECTRONICS CORP.
- 优先权： TW103129584 20140827
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78
摘要：
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a metal gate thereon and a hard mask atop the metal gate; and performing a high-density plasma (HDP) process to form a cap layer on the hard mask and the substrate.
信息查询
IPC分类:
