Invention Application
- Patent Title: MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME
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Application No.: US14941088Application Date: 2015-11-13
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Publication No.: US20160072044A1Publication Date: 2016-03-10
- Inventor: Kamal M. Karda , F. Daniel Gealy , D.V. Nirmal Ramaswamy , Chandra V. Mouli
- Applicant: Micron Technology, Inc.
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12
Abstract:
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.
Public/Granted literature
- US09564576B2 Multi-bit ferroelectric memory device and methods of forming the same Public/Granted day:2017-02-07
Information query
IPC分类:
