Invention Application
- Patent Title: METHOD FOR PRODUCING GRAPHENE
- Patent Title (中): 生产石墨的方法
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Application No.: US14947659Application Date: 2015-11-20
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Publication No.: US20160075560A1Publication Date: 2016-03-17
- Inventor: Munehito KAGAYA , Takashi MATSUMOTO , Daisuke NISHIDE
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2013-112928 20130529
- Main IPC: C01B31/04
- IPC: C01B31/04 ; C23C16/26 ; C23C16/50

Abstract:
A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.
Public/Granted literature
- US09822009B2 Method for producing graphene Public/Granted day:2017-11-21
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