公开(公告)号：US20190108984A1

公开(公告)日：2019-04-11

申请号：US16087249

申请日：2017-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato MORISHIMA ,  Katsuhiko IWABUCHI ,  Takashi FUSE ,  Madoka FUJIMOTO ,  Daisuke NISHIDE

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

公开(公告)号：US20220122802A1

公开(公告)日：2022-04-21

申请号：US17565183

申请日：2021-12-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Toru HISAMATSU ,  Shinya ISHIKAWA

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US20210202262A1

公开(公告)日：2021-07-01

申请号：US17133974

申请日：2020-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takayuki Katsunuma

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.

公开(公告)号：US20170016116A1

公开(公告)日：2017-01-19

申请号：US15202869

申请日：2016-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/455 ,  C01B31/04

CPC classification number: C01B32/186 ,  C23C14/025 ,  C23C14/0605 ,  C23C14/568 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/54

Abstract: There is provided a graphene production method including: forming a catalyst metal film on a surface of a substrate; heating the catalyst metal film; and cooling the heated catalyst metal film, wherein the forming a catalyst metal film includes introducing carbons into the catalyst metal film.

Abstract translation: 提供了一种石墨烯制造方法，包括：在基板的表面上形成催化剂金属膜; 加热催化剂金属膜; 并冷却加热的催化剂金属膜，其中形成催化剂金属膜包括将碳引入催化剂金属膜中。

公开(公告)号：US20160075560A1

公开(公告)日：2016-03-17

申请号：US14947659

申请日：2015-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Takashi MATSUMOTO ,  Daisuke NISHIDE

IPC: C01B31/04 ,  C23C16/26 ,  C23C16/50

CPC classification number: C01B32/186 ,  C01B2204/32 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574

Abstract: A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.

Abstract translation: 能够增加石墨烯每个畴的尺寸的石墨烯制造方法。 一种激活形成在晶片上的催化剂金属层的等离子体CVD膜形成装置; 将其改变为活化的催化剂金属层; 在与晶片相对的空间中通过等离子体分解C2H4气体作为低反应性含碳气体; 并通过空间中的热量将C2H2气体分解为高反应性含碳气体。

公开(公告)号：US20160251757A1

公开(公告)日：2016-09-01

申请号：US15151760

申请日：2016-05-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA

IPC: C23C16/26 ,  C01B31/02

CPC classification number: C23C16/26 ,  C01B32/16 ,  C01B32/162 ,  C01B2202/08 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A carbon nanotube producing method, which is capable of realizing a low resistant depth-wise wiring. An acetylene gas is first supplied as a carbon-containing gas and subsequently, an ethylene gas is supplied as the carbon-containing gas such that carbon nanotubes are produced.

Abstract translation: 一种碳纳米管制造方法，其能够实现低阻抗深度线。 首先将乙炔气体作为含碳气体供给，接着，作为含碳气体供给乙烯气体，制造碳纳米管。

公开(公告)号：US20210098234A1

公开(公告)日：2021-04-01

申请号：US17035899

申请日：2020-09-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KATSUNUMA ,  Daisuke NISHIDE

IPC: H01J37/32 ,  H01L21/311

Abstract: A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.

公开(公告)号：US20160042958A1

公开(公告)日：2016-02-11

申请号：US14819038

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA ,  Ryota IFUKU

IPC: H01L21/285 ,  C23C16/52 ,  H01L21/67 ,  C23C16/18 ,  C23C16/26 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/26 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Abstract translation: 形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于 在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。

公开(公告)号：US20200243298A1

公开(公告)日：2020-07-30

申请号：US16775960

申请日：2020-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Toru HISAMATSU ,  Shinya ISHIKAWA

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US20170268103A1

公开(公告)日：2017-09-21

申请号：US15613739

申请日：2017-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA ,  Ryota IFUKU

IPC: C23C16/26 ,  C23C16/18 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.