Invention Application
- Patent Title: Deposition Apparatus and Deposition Method Using the Same
- Patent Title (中): 沉积装置及其沉积方法
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Application No.: US14952624Application Date: 2015-11-25
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Publication No.: US20160076142A1Publication Date: 2016-03-17
- Inventor: Tienyu SHENG , Hao CHEN
- Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.
- Main IPC: C23C14/48
- IPC: C23C14/48 ; C23C14/30 ; H01L21/265 ; C23C14/22

Abstract:
The present invention provides a deposition apparatus and deposition method using the same. The deposition apparatus comprises: a process chamber, wherein a work piece is disposed therein; a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma with ions bombard the work piece; and a second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical, the second plasma having radical deposits a surface of the work piece.
Information query
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