Invention Application
- Patent Title: SUBSTRATE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 基板结构及其制造方法
-
Application No.: US14607572Application Date: 2015-01-28
-
Publication No.: US20160081186A1Publication Date: 2016-03-17
- Inventor: Chun-Hsien Lin , Shih-Chao Chiu , Yu-Cheng Pai , Tzu-Chieh Shen , Chia-Cheng Chen
- Applicant: Siliconware Precision Industries Co., Ltd.
- Priority: TW103131511 20140912
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K3/40 ; H05K3/18 ; H05K1/11 ; H05K3/00

Abstract:
The present invention provides a substrate structure and a method of fabricating the substrate substrure. The method includes: forming a first wiring layer on a first carrier, forming a dielectric layer on the first wiring layer, forming a second wiring layer on the dielectric layer, forming an insulating protection layer on the second wiring layer, forming a second carrier on the insulative protection layer, and remvoing the first carrier. The formation of the second carrier provides the substrate structure with adequate rigidity to avoid breakage or warpage such that the miniaturization requirement can be satisfied.
Information query