Invention Application
US20160085622A1 EXPANDED ERROR CORRECTION CODES 有权
扩展错误修正代码

EXPANDED ERROR CORRECTION CODES
Abstract:
In some examples, a memory device may be configured to store data in either an original or an inverted state based at least in part on whether the majority of bits are set to a high state or a low state. For instance, the memory device may be configured to set each bit in the memory array to a low state when the data is read. The memory device may then be configured to store the data in the original state when a majority of the bits to be written to the array are in the low state and in the inverted state when the majority of the bits to be written to the array are in the high state.
Public/Granted literature
Information query
Patent Agency Ranking
0/0