Invention Application
US20160086669A1 NONVOLATILE MEMORY DEVICE WITH IMPROVED VOLTAGE DROP AND METHOD OF DRIVING THE SAME
有权
具有改进的电压降的非易失性存储器件及其驱动方法
- Patent Title: NONVOLATILE MEMORY DEVICE WITH IMPROVED VOLTAGE DROP AND METHOD OF DRIVING THE SAME
- Patent Title (中): 具有改进的电压降的非易失性存储器件及其驱动方法
-
Application No.: US14587151Application Date: 2014-12-31
-
Publication No.: US20160086669A1Publication Date: 2016-03-24
- Inventor: Nam Kyeong KIM , Duck Ju KIM
- Applicant: SK hynix Inc.
- Priority: KR10-2014-0127537 20140924
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
A nonvolatile memory device includes a block switching unit which transmits an operation signal to a memory cell array, and a voltage sustaining block which provides a voltage to sustain the operation signal to an arbitrary interconnection overlapping the block switching unit.
Public/Granted literature
- US09299444B1 Nonvolatile memory device with improved voltage drop and method of driving the same Public/Granted day:2016-03-29
Information query
