Invention Application
US20160086934A1 LIL ENHANCED ESD-PNP IN A BCD 有权
LCD在BCD中增强ESD-PNP

LIL ENHANCED ESD-PNP IN A BCD
Abstract:
Disclosed is a PNP ESD integrated circuit, including a substrate, an active region formed within the substrate, the active region including at least one base region of a second conductivity type, a plurality of collector regions of a first conductivity type formed within the active region, a plurality of emitter regions of the first conductivity type formed within the active region, and a local interconnect layer (LIL) contacting the plurality of emitter regions and the plurality of collector regions, the LIL including cooling fin contacts formed on the collector regions to enhance the current handling capacity of the collector regions.
Public/Granted literature
Information query
Patent Agency Ranking
0/0