A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.