-
公开(公告)号：US20140219304A1
公开(公告)日：2014-08-07
申请号：US14154556
申请日：2014-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Ho LEE , Chan Mook LIM , Young Chul SHIN , Su Hyun JO
CPC classification number: H01S5/02 , H01L33/0079 , H01L33/382 , H01L33/44
Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.
Abstract translation: 半导体发光器件包括导电衬底，层叠在导电衬底上的第二导电型半导体层，有源层和第一导电型半导体层的发光层叠体，与第一导电型电连接的第一电极层 半导体层，在导电基板和第二导电类型半导体层之间的第二电极层，第二电极层电连接到第二导电类型半导体层，以及在有源层和第二电极层之间的钝化层，钝化层 层覆盖发光层压板的有源层的至少一个侧表面。
-
公开(公告)号：US20150108520A1
公开(公告)日：2015-04-23
申请号：US14454612
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hun KIM , Ki Seok KIM , Chan Mook LIM , Tae Kang KIM
CPC classification number: H01L33/40 , H01L33/145 , H01L33/38 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.
Abstract translation: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层，设置在电流阻挡层上的反射部分，设置在第二导电类型半导体层上的透明电极层，设置在电流阻挡层的区域内的焊盘电极部分，以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开，并且具有围绕反射部分的开口。 在一些示例中，透明电极层可以进一步与电流阻挡层间隔开。
-
公开(公告)号：US20140217355A1
公开(公告)日：2014-08-07
申请号：US13759585
申请日：2013-02-05
Inventor： Gi Bum KIM , Ming MA , Ahmed NOEMAUN , E. Fred SCHUBERT , Jae-Hee CHO , Cheol Soo SONE , Sung Tae KIM , Chan Mook LIM
IPC: H01L33/22
CPC classification number: H01L33/44 , H01L2933/0083
Abstract: A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape.
Abstract translation: 半导体发光器件包括：具有第一和第二导电类型半导体层的半导体层叠体和形成在第一和第二导电类型半导体层之间的有源层; 分别连接到第一和第二导电类型半导体层的第一和第二电极; 以及形成在发光面的微图案，从该有源层产生的光被输出，其中与发光面平行的微图案的一部分具有多边形形状。
-
Patent Agency Ranking
公开(公告)号：US20130313986A1
公开(公告)日：2013-11-28
申请号：US13900288
申请日：2013-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Je Won KIM , Sung Tae KIM , Chan Mook LIM
IPC: H05B33/08
CPC classification number: H05B33/0809
Abstract: A light emitting apparatus includes a power supply providing power having a predetermined frequency, a plurality of light emitting diode arrays, and at least one frequency converter. The light emitting diode arrays are electrically connected to the power supply and respectively have an array structure in which at least one or more light emitting diodes are connected to one another in series. The at least one frequency converter is connected to both ends of the power supply, and configured to modulate a frequency of the power provided from the power supply and provide a modulated electrical signal to at least one of the plurality of light emitting diode arrays.
Abstract translation: 发光装置包括提供具有预定频率的功率的电源，多个发光二极管阵列和至少一个频率转换器。 发光二极管阵列电连接到电源，并且分别具有其中至少一个或多个发光二极管彼此串联连接的阵列结构。 所述至少一个变频器连接到所述电源的两端，并且被配置为调制从所述电源提供的电力的频率，并将调制的电信号提供给所述多个发光二极管阵列中的至少一个。
-
公开(公告)号：US20130234611A1
公开(公告)日：2013-09-12
申请号：US13789601
申请日：2013-03-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Ho LEE , Sung Tae KIM , Chan Mook LIM , Jin Hwan KIM
IPC: H05B33/08
CPC classification number: H05B33/083 , H05B33/0809 , H05B33/0821
Abstract: Light emitting devices. A light emitting device including a power source; and a plurality of light emitting diode (LED) arrays coupled to the power source unit; and at least one delay unit. Each delay unit is coupled to a corresponding light emitting diode array of the light emitting diode arrays.
Abstract translation: 发光装置。 一种发光装置，包括电源; 以及耦合到所述电源单元的多个发光二极管（LED）阵列; 和至少一个延迟单元。 每个延迟单元耦合到发光二极管阵列的对应的发光二极管阵列。
-
公开(公告)号：US20170005242A1
公开(公告)日：2017-01-05
申请号：US15138326
申请日：2016-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Myeong Ha KIM , Sang Yeob SONG , Chan Mook LIM
CPC classification number: H01L33/46 , F21K9/23 , F21K9/27 , F21V23/005 , F21Y2103/10 , F21Y2105/10 , F21Y2115/10 , H01L33/08 , H01L33/24 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.
Abstract translation: 半导体发光器件可以包括具有第一表面和第二表面的衬底，第二表面与第一表面相对; 发光结构，其设置在所述基板的所述第一表面上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及设置在所述基板的所述第二表面上并且包括低折射率层和布拉格层的反射器，其中所述布拉格层包括具有不同折射率的多个交替堆叠的层，并且其中所述低折射率层的折射率 低于布拉格层的折射率。
-
公开(公告)号：US20160087159A1
公开(公告)日：2016-03-24
申请号：US14720698
申请日：2015-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Myeong Ha KIM , Chan Mook LIM , Masaaki SOFUE , Sang Yeob SONG , Mi Jeong YUN
CPC classification number: H01L33/46 , H01L33/50 , H01L2224/1403 , H01L2224/16225 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.
Abstract translation: 一种半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构以及设置在发光结构上的选择性透射反射层，并且包括 具有交替层叠至少一次的具有不同光学厚度的多个电介质层。 具有最大光学厚度和具有最小光学厚度的介电层的光学厚度的介电层的光学厚度的总和在0.75至0.80的范围内。
-
8.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD OF MANUFACTURING THE SAME 有权具有多个细胞阵列的半导体发光器件及其制造方法公开(公告)号：US20140008665A1
公开(公告)日：2014-01-09
申请号：US13933887
申请日：2013-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Su Hyun JO , Jong Ho LEE , Jin Hyun LEE , Chan Mook LIM , Jin Hwan KIM
CPC classification number: H01L27/15 , H01L27/156 , H01L33/005 , H01L33/20 , H01L2933/0016
Abstract: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.
Abstract translation: 一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.016 seconds)
