Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US14856059Application Date: 2015-09-16
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Publication No.: US20160087622A1Publication Date: 2016-03-24
- Inventor: Shunichi KAERIYAMA
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2014-190819 20140919
- Main IPC: H03K17/082
- IPC: H03K17/082

Abstract:
The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same.
Public/Granted literature
- US09712149B2 Semiconductor device Public/Granted day:2017-07-18
Information query
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