Invention Application
- Patent Title: PIEZOELECTRIC MICROPHONE WITH INTEGRATED CMOS
- Patent Title (中): 具有集成CMOS的压电麦克风
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Application No.: US14860139Application Date: 2015-09-21
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Publication No.: US20160090300A1Publication Date: 2016-03-31
- Inventor: Julius Ming-Lin Tsai , Michael Daneman
- Applicant: INVENSENSE, INC.
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
A piezoelectric microphone and/or a piezoelectric microphone system is presented herein. In an implementation, a piezoelectric microphone includes a microelectromechanical systems (MEMS) layer and a complementary metal-oxide-semiconductor (CMOS) layer. The MEMS layer includes at least one piezoelectric layer and a conductive layer. The conductive layer is deposited on the at least one piezoelectric layer and is associated with at least one sensing electrode. The CMOS layer is deposited on the MEMS layer. Furthermore, a cavity formed in the CMOS layer includes the at least one sensing electrode
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