Systems and methods relate to providing a correct reference voltage for reading a resistive memory element such as a magnetoresistive random access memory (MRAM) bit cell. Two or more reference voltages are provided for each MRAM bit cell and a correct reference voltage is selected from the two or more reference voltages for reading the MRAM bit cell. The correct reference voltage meets sensing margin requirements for reading the MRAM bit cell and overcomes non-idealities and offset voltages in read circuitry for reading the MRAM bit cell. An indication of the correct reference voltage is stored in a non-volatile latch or other non-volatile programmable memory and provided to the read circuitry.