An operating method of a nonvolatile memory device is provided. The nonvolatile memory device includes first and second page buffers, and first and second bit lines connected thereto, respectively. First and second latch nodes of the first page buffer are charged to have a voltage having a first level according to data stored in a first latch of the first page buffer. After the charging of the first latch node is started, a sensing node of the second page buffer is pre-charged. The sensing node is connected to the second bit line. Data stored in the first latch is dumped into a second latch of the first page buffer during the pre-charging of the sensing node of the second page buffer.