Invention Application
- Patent Title: HIGH VOLTAGE MULTIPLE CHANNEL LDMOS
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Application No.: US14965182Application Date: 2015-12-10
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Publication No.: US20160093612A1Publication Date: 2016-03-31
- Inventor: Yongxi Zhang , Sameer P. Pendharkar
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/167 ; H01L21/8238 ; H01L21/762 ; H01L21/265 ; H01L21/324 ; H01L27/092 ; H01L29/06
Abstract:
An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.
Public/Granted literature
- US09806074B2 High voltage multiple channel LDMOS Public/Granted day:2017-10-31
Information query
IPC分类:
