Invention Application
US20160093668A1 MRAM INTEGRATION WITH LOW-K INTER-METAL DIELECTRIC FOR REDUCED PARASITIC CAPACITANCE
有权
具有低K金属间电介质的MRAM集成用于降低PARASIIC电容
- Patent Title: MRAM INTEGRATION WITH LOW-K INTER-METAL DIELECTRIC FOR REDUCED PARASITIC CAPACITANCE
- Patent Title (中): 具有低K金属间电介质的MRAM集成用于降低PARASIIC电容
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Application No.: US14496525Application Date: 2014-09-25
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Publication No.: US20160093668A1Publication Date: 2016-03-31
- Inventor: Yu LU , Xia LI , Seung Hyuk KANG
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L45/02 ; H01L45/00

Abstract:
Systems and methods of integration of resistive memory elements with logic elements in advanced nodes with improved mechanical stability and reduced parasitic capacitance include a resistive memory element and a logic element formed in a common integration layer extending between a bottom cap layer and a top cap layer. At least a first intermetal dielectric (IMD) layer of high-K value is formed in the common integration layer and surrounding at least the resistive memory element, to provide high rigidity and mechanical stability. A second IMD layer of low-K value to reduce parasitic capacitance of the logic element is formed in either the common integration layer, a top layer above the top cap layer or an intermediate layer in between the top and bottom cap layers. Air gaps may be formed in one or more IMD layers to further reduce capacitance.
Public/Granted literature
- US09548333B2 MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance Public/Granted day:2017-01-17
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