Invention Application
US20160095221A1 INTEGRATION OF ELECTRONIC ELEMENTS ON THE BACKSIDE OF A SEMICONDUCTOR DIE 审中-公开
电子元件在半导体器件背面的集成

INTEGRATION OF ELECTRONIC ELEMENTS ON THE BACKSIDE OF A SEMICONDUCTOR DIE
Abstract:
Systems and methods include a first semiconductor die with a substrate having a first side and a second side opposite to the first side. A first set of electronic elements is integrated on the first side. A second set of electronic elements is integrated on the second side. One or more through-substrate vias through the substrate are used to couple one or more of the first set of electronic elements and one or more of the second set of electronic elements. The through-substrate vias may be through-silicon vias (TSVs) or a through-glass vias (TGVs). The first semiconductor die may be stacked with a second semiconductor die, with the first side or the second side of the first semiconductor die interfacing an active side of the second semiconductor die.
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