Invention Application
US20160099229A1 SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME 有权
具有电极的半导体器件,包括其的半导体器件,其制造方法,包括其的电子系统以及包括其的存储器卡

  • Patent Title: SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME
  • Patent Title (中): 具有电极的半导体器件,包括其的半导体器件,其制造方法,包括其的电子系统以及包括其的存储器卡
  • Application No.: US14621156
    Application Date: 2015-02-12
  • Publication No.: US20160099229A1
    Publication Date: 2016-04-07
  • Inventor: Hyeong Seok CHOI
  • Applicant: SK hynix Inc.
  • Priority: KR10-2014-0134281 20141006
  • Main IPC: H01L25/065
  • IPC: H01L25/065 H01L23/00
SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME
Abstract:
A semiconductor device includes a substrate having a first surface and a second surface that are opposite to each other, a plurality of through electrodes penetrating the substrate and extending from the first surface to the second surface, front-side bumps disposed on the first surface and connected to odd-numbered through electrodes among the plurality of through electrodes, and backside bumps disposed on the second surface and connected to even-numbered through electrodes among the plurality of through electrodes. Related semiconductor packages, fabrication methods, electronic systems and memory cards are also provided.
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