发明申请
US20160099291A1 METAL LINE CONNECTION FOR IMPROVED RRAM RELIABILITY, SEMICONDUCTOR ARRANGEMENT COMPRISING THE SAME, AND MANUFACTURE THEREOF
有权
改善RRAM可靠性的金属线连接，包含该RRAM可靠性的半导体装置及其制造
- 专利标题： METAL LINE CONNECTION FOR IMPROVED RRAM RELIABILITY, SEMICONDUCTOR ARRANGEMENT COMPRISING THE SAME, AND MANUFACTURE THEREOF
- 专利标题（中）： 改善RRAM可靠性的金属线连接，包含该RRAM可靠性的半导体装置及其制造
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申请号： US14967697申请日： 2015-12-14
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公开(公告)号： US20160099291A1公开(公告)日： 2016-04-07
- 发明人: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L23/528 ; H01L45/00
摘要：
Some embodiments relate to an integrated circuit device including an array of memory cells disposed over a semiconductor substrate. An array of first metal lines are disposed at a first height over the substrate and are connected to the memory cells of the array. Each of the first metal lines has a first cross-sectional area. An array of second metal lines are disposed at a second height over the substrate and are connected to the memory cells of the array. Each of the second metal lines has a second cross-sectional area which is greater than the first cross-sectional area.
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