发明申请
US20160099684A1 INTEGRATED POWER DEVICE WITH A METAL OXYNITRIDE ACTIVE CHANNEL FOR POWER SWITCHING AND MICROWAVE AMPLIFICATION
审中-公开
具有金属氧化物活性通道的集成电源装置，用于电源开关和微波放大
- 专利标题： INTEGRATED POWER DEVICE WITH A METAL OXYNITRIDE ACTIVE CHANNEL FOR POWER SWITCHING AND MICROWAVE AMPLIFICATION
- 专利标题（中）： 具有金属氧化物活性通道的集成电源装置，用于电源开关和微波放大
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申请号： US14121664申请日： 2014-10-06
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公开(公告)号： US20160099684A1公开(公告)日： 2016-04-07
- 发明人: Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Lu Han , Chunong Qiu , Ishiang Shih
- 申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Lu Han , Chunong Qiu , Ishiang Shih
- 主分类号： H03F1/02
- IPC分类号： H03F1/02 ; H03K3/012 ; H03F3/195 ; H01L29/20 ; H03F3/213
摘要：
One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.
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