公开(公告)号：US09325279B1

公开(公告)日：2016-04-26

申请号：US14121664

申请日：2014-10-06

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

IPC分类号： H01L29/786 ,  H01L29/76 ,  H03F1/02 ,  H01L29/20 ,  H03F3/213 ,  H03F3/195 ,  H03K3/012

CPC分类号： H03F1/0205 ,  H01L21/8258 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/76 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/451 ,  H03K3/012

摘要： One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

摘要翻译： 本发明的一个目的是提供一种集成功率晶体管器件的结构，其具有低热量预算金属氮氧化物作为CMOS逻辑和控制电路芯片上的有源沟道，以形成用于功率开关的集成智能功率开关模块。 本发明的另一个目的是提供一种在CMOS逻辑和控制电路芯片上具有低热预算金属氧氮化物有源沟道层的集成功率放大器晶体管器件的结构，以形成用于RF功率放大的集成智能微波功率放大器。

公开(公告)号：US09443740B1

公开(公告)日：2016-09-13

申请号：US14545516

申请日：2015-05-15

申请人： Cindy X. Qiu ,  Kuang-Yu Yang ,  Ishiang Shih ,  Lu Han ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

发明人： Cindy X. Qiu ,  Kuang-Yu Yang ,  Ishiang Shih ,  Lu Han ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

IPC分类号： H01L21/027 ,  H01L21/8232 ,  H01L21/3065 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/285 ,  H01L21/3205

CPC分类号： H01L21/32051 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/28587 ,  H01L21/31058 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7786

摘要： A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.

摘要翻译： 提供了一种用于形成具有增强的机械强度的T形栅极和用于高电子迁移率晶体管的栅极长度减小的工艺。 该方法包括以下步骤：形成具有圆形顶部边缘的杆部分腔，以增强机械强度，产生不溶性扩散特征收缩层以减小栅极长度，进行热流程以进一步减小栅极长度，并形成 具有负侧壁倾斜的头部空腔以便于栅极金属层的剥离。

公开(公告)号：US20160099684A1

公开(公告)日：2016-04-07

申请号：US14121664

申请日：2014-10-06

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

IPC分类号： H03F1/02 ,  H03K3/012 ,  H03F3/195 ,  H01L29/20 ,  H03F3/213

CPC分类号： H03F1/0205 ,  H01L21/8258 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/76 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/451 ,  H03K3/012

摘要： One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

摘要翻译： 本发明的一个目的是提供一种集成功率晶体管器件的结构，其具有低热量预算金属氮氧化物作为CMOS逻辑和控制电路芯片上的有源沟道，以形成用于功率开关的集成智能功率开关模块。 本发明的另一个目的是提供一种在CMOS逻辑和控制电路芯片上具有低热预算金属氧氮化物有源沟道层的集成功率放大器晶体管器件的结构，以形成用于RF功率放大的集成智能微波功率放大器。

公开(公告)号：US20160225915A1

公开(公告)日：2016-08-04

申请号：US14544652

申请日：2015-01-30

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/423 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/78609 ,  H01L29/7869

摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

摘要翻译： 提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。 第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。 杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

公开(公告)号：US09324884B1

公开(公告)日：2016-04-26

申请号：US14544752

申请日：2015-02-12

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/51 ,  H01L29/861 ,  H01L29/24 ,  H01L29/45 ,  H01L29/06 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L29/861 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.

摘要翻译： 提供具有至少第一导电类型的第一金属氧氮化物层和第二导电类型的第二金属氧氮化物层的金属氧氮化物二极管。 第一氧氮化物层是选择性掺杂的或非有意掺杂的并且具有高载流子迁移率。 第二氧氮化物层也是选择性掺杂或非有意掺杂的并且具有高载流子迁移率。 可以采用具有低载流子密度的补偿氮氧化物漂移层来增加器件的击穿电压。

公开(公告)号：US20200036364A1

公开(公告)日：2020-01-30

申请号：US15998270

申请日：2018-07-27

申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03M1/66 ,  H01L41/107

摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

公开(公告)号：US20160308067A1

公开(公告)日：2016-10-20

申请号：US14545285

申请日：2015-04-17

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/417

CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.

摘要翻译： 提供了具有第一金属氧氮化物沟道层或第一金属氧化物沟道层的薄膜晶体管，以在底表面区域，中心沟道区域和顶表面区域中具有受控的沟道掺杂浓度，使得底表面 区域和中心沟道区域之间以及顶表面区域和中心沟道区域之间的区域大于第一阈值掺杂比并且小于第二阈值掺杂比，以便在第一沟道层中保持更均匀的载流子迁移率值，并且 提高薄膜晶体管器件的性能。

公开(公告)号：US20190393860A1

公开(公告)日：2019-12-26

申请号：US15998066

申请日：2018-06-25

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/56 ,  H03H9/17 ,  H03H9/13 ,  H03H9/02

摘要： The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

公开(公告)号：US20170366165A1

公开(公告)日：2017-12-21

申请号：US14999711

申请日：2016-06-20

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/64

CPC分类号： H03H9/145 ,  H03H9/02614 ,  H03H9/02976 ,  H03H9/14538 ,  H03H9/25 ,  H03H9/64 ,  H03H2009/02165

摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.

公开(公告)号：US20170085246A1

公开(公告)日：2017-03-23

申请号：US14756554

申请日：2015-09-17

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/145 ,  H03H9/25

CPC分类号： H03H9/02574 ,  H03H9/02834 ,  H03H9/14541 ,  H03H2009/02165

摘要： Filters and oscillators are important components for electronic systems especially those for communications. For many portable units operating at 2 GHz or less, surface acoustic wave resonators are used as filters or oscillators, the resonant frequency is determined by the electrode pitch and velocity of the surface acoustic waves. Because of the large number of frequency bands for communications, it is important to have SAW resonators where the resonant frequencies are tunable and adjustable. This invention provides tunable surface acoustic wave resonators utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency. A plurality of the present tunable SAW devices may be connected into a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency or an tunable oscillator by varying the DC biasing voltages.