Invention Application
US20160104772A1 METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A DUMMY GATE
审中-公开
使用DUMMY GATE制造半导体器件的方法
- Patent Title: METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A DUMMY GATE
- Patent Title (中): 使用DUMMY GATE制造半导体器件的方法
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Application No.: US14976781Application Date: 2015-12-21
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Publication No.: US20160104772A1Publication Date: 2016-04-14
- Inventor: Nicolas Loubet , Prasanna Khare
- Applicant: STMICROELECTRONICS, INC.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/165 ; H01L29/66
Abstract:
A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer is used to define a plurality of fins in the semiconductor layer. A gate is formed over the plurality of fins.
Public/Granted literature
- US09905662B2 Method of making a semiconductor device using a dummy gate Public/Granted day:2018-02-27
Information query
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