Invention Application
US20160111338A1 METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
审中-公开
用于融合FINFET器件的SiGe和Si沟道的方法
- Patent Title: METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
- Patent Title (中): 用于融合FINFET器件的SiGe和Si沟道的方法
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Application No.: US14969393Application Date: 2015-12-15
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Publication No.: US20160111338A1Publication Date: 2016-04-21
- Inventor: NICOLAS LOUBET , PRASANNA KHARE , QING LIU
- Applicant: STMICROELECTRONICS, INC.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/308 ; H01L21/3065
Abstract:
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.
Public/Granted literature
- US09847260B2 Method to co-integrate SiGe and Si channels for finFET devices Public/Granted day:2017-12-19
Information query
IPC分类:
