Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE INCLUDING A DIE SEAL LEAKAGE DETECTION MATERIAL, METHOD FOR THE FORMATION THEREOF AND METHOD INCLUDING A TEST OF A SEMICONDUCTOR STRUCTURE
- Patent Title (中): 包括DIE密封泄漏检测材料的半导体结构及其形成方法和包括半导体结构测试的方法
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Application No.: US14515986Application Date: 2014-10-16
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Publication No.: US20160111381A1Publication Date: 2016-04-21
- Inventor: Thomas Werner , Frank Feustel , Oliver Aubel
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/66 ; H01L21/768 ; H01L21/02 ; H01L23/528 ; H01L23/31

Abstract:
A semiconductor structure includes a semiconductor substrate, one or more interconnect layers provided over the substrate and a circuit. The circuit includes a plurality of circuit elements formed at the substrate and a plurality of electrical connections provided in the one or more interconnect layers. A die seal is provided in the one or more interconnect layers. A die seal leakage detection material is arranged in the one or more interconnect layers between the die seal and the plurality of electrical connections. The die seal provides a protection of the die seal leakage detection material from moisture if the die seal is intact. The die seal leakage detection material is adapted for providing a detectable modification of the circuit after an exposure of the die seal leakage detection material to moisture.
Public/Granted literature
Information query
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