Invention Application
US20160111527A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FIN-SHAPED STRUCTURE
有权
用于制造具有精细形状结构的半导体器件的方法
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FIN-SHAPED STRUCTURE
- Patent Title (中): 用于制造具有精细形状结构的半导体器件的方法
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Application No.: US14979594Application Date: 2015-12-28
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Publication No.: US20160111527A1Publication Date: 2016-04-21
- Inventor: Chin-Cheng Chien , Hsin-Kuo Hsu , Chih-Chien Liu , Chin-Fu Lin , Chun-Yuan Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201410247402.1 20140605
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/311 ; H01L29/10 ; H01L21/02

Abstract:
A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.
Public/Granted literature
- US09461150B2 Method for fabricating semiconductor device with fin-shaped structure Public/Granted day:2016-10-04
Information query
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