Invention Application
US20160111527A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FIN-SHAPED STRUCTURE 有权
用于制造具有精细形状结构的半导体器件的方法

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FIN-SHAPED STRUCTURE
Abstract:
A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.
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