Invention Application
- Patent Title: Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device
- Patent Title (中): 半导体膜的制造方法,半导体装置的制造方法以及光电转换装置的制造方法
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Application No.: US14978463Application Date: 2015-12-22
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Publication No.: US20160111590A1Publication Date: 2016-04-21
- Inventor: Tetsuhiro TANAKA , Erika KATO
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Priority: JP2010-151644 20100702
- Main IPC: H01L31/20
- IPC: H01L31/20 ; H01L31/105

Abstract:
A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
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