Invention Application
US20160111600A1 LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
有权
发光二极管,其制造方法和具有该发光二极管的LED模块
- Patent Title: LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
- Patent Title (中): 发光二极管,其制造方法和具有该发光二极管的LED模块
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Application No.: US14985162Application Date: 2015-12-30
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Publication No.: US20160111600A1Publication Date: 2016-04-21
- Inventor: Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang , Se Hee Oh , Hyun A. Kim
- Applicant: Seoul Viosys Co., Ltd.
- Priority: KR10-2013-0089414 20130729; KR10-2013-0089415 20130729; KR10-2014-0195162 20141231; KR10-2015-0165706 20151125
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/24 ; H01L33/40

Abstract:
A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
Public/Granted literature
- US09847457B2 Light emitting diode, method of fabricating the same and LED module having the same Public/Granted day:2017-12-19
Information query
IPC分类: