Invention Application
- Patent Title: Method of Fabricating Piezoelectric MEMS Devices
- Patent Title (中): 制造压电MEMS器件的方法
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Application No.: US14515929Application Date: 2014-10-16
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Publication No.: US20160111625A1Publication Date: 2016-04-21
- Inventor: Thomas Kieran Nunan , Eugene Oh Hwang , Sunil Ashok Bhave
- Applicant: Analog Devices, Inc.
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H01L41/113

Abstract:
A single photo mask can be used to define the three critical layers for the piezoelectric MEMS device, specifically the top electrode layer, the piezoelectric material layer, and the bottom electrode layer. Using a single photo mask removes the misalignment source caused by using multiple photo masks. Furthermore, in certain exemplary embodiments, all electrical interconnects use underpass interconnect. This simplifies the process for defining the device electrodes and the process sequence for achieving self-alignment between the piezoelectric element and the top and bottom electrodes. This self-alignment is achieved by using an oxide hard mask to etch the critical region of the top electrode, the piezoelectric material, and the bottom electrode with one mask and different etch chemistries depending on the layer being etched.
Public/Granted literature
- US09917243B2 Method of fabricating piezoelectric MEMS devices Public/Granted day:2018-03-13
Information query
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