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Invention Application
US20160115591A1 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR REMOVING A SILICON-CONTAINING LAYER ON A COMPONENT OF SUCH A REACTOR 有权
用于生产多晶硅的反应器和用于在这种反应器的组分上除去含硅层的方法

  • Patent Title: REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR REMOVING A SILICON-CONTAINING LAYER ON A COMPONENT OF SUCH A REACTOR
  • Patent Title (中): 用于生产多晶硅的反应器和用于在这种反应器的组分上除去含硅层的方法
  • Application No.: US14891458
    Application Date: 2014-05-06
  • Publication No.: US20160115591A1
    Publication Date: 2016-04-28
  • Inventor: Dirk WECKESSER
  • Applicant: WACKER CHEMIE AG
  • Priority: DE102013209076.5 20130516
  • International Application: PCT/EP2014/059166 WO 20140506
  • Main IPC: C23C16/44
  • IPC: C23C16/44 ;  B01D50/00 ;  B01D45/16 ;  C23C16/24 ;  C23C16/442
REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR REMOVING A SILICON-CONTAINING LAYER ON A COMPONENT OF SUCH A REACTOR
Abstract:
Silicon deposited by CVD and/or silico dust is removed from a polycrystalline silicon deposition reactor component by abrasion with silicon-containing particles in a gas stream.
Abstract(Chinese):

通过用气流中的含硅颗粒的磨损从多晶硅沉积反应器组件中除去通过CVD沉积的硅和/或硅灰尘。

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