Invention Application
- Patent Title: FABRICATION METHOD OF EMBEDDED CHIP SUBSTRATE
- Patent Title (中): 嵌入芯片基板的制造方法
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Application No.: US14990425Application Date: 2016-01-07
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Publication No.: US20160118325A1Publication Date: 2016-04-28
- Inventor: Yung-Hui WANG , Ying-Te OU
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Priority: TW97127864 20080722
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48

Abstract:
An embedded chip substrate includes a first insulation layer, a core layer, a chip, a second insulation layer, a first circuit layer, and a second circuit layer. The core layer disposed on the first insulation layer has an opening that exposes a portion of the first insulation layer. The chip is adhered into a recess constructed by the opening and the first insulation layer. The second insulation layer is disposed on the core layer for covering the chip. The first circuit layer is disposed at the outer side of the first insulation layer located between the first circuit layer and the core layer. The second circuit layer is disposed at the outer side of the second insulation layer located between the second circuit layer and the core layer. The first circuit layer is electrically connected to the second circuit layer that is electrically connected to the chip.
Public/Granted literature
- US09768103B2 Fabrication method of embedded chip substrate Public/Granted day:2017-09-19
Information query
IPC分类: