- 专利标题: Metal Shielding Layer in Backside Illumination Image Sensor Chips and Methods for Forming the Same
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申请号: US14981124申请日: 2015-12-28
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公开(公告)号: US20160118434A1公开(公告)日: 2016-04-28
- 发明人: Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
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