-
1.发明申请公开(公告)号：US20190252427A1
公开(公告)日：2019-08-15
申请号：US16397773
申请日：2019-04-29
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H01L27/14685
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
-
2.发明授权公开(公告)号：US11018176B2
公开(公告)日：2021-05-25
申请号：US16397773
申请日：2019-04-29
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
-
公开(公告)号：US10741601B2
公开(公告)日：2020-08-11
申请号：US16223712
申请日：2018-12-18
IPC分类号： H01L27/146 , H01L21/768
摘要： Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
-
4.发明授权公开(公告)号：US10276621B2
公开(公告)日：2019-04-30
申请号：US15483904
申请日：2017-04-10
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
-
5.发明申请公开(公告)号：US20160118434A1
公开(公告)日：2016-04-28
申请号：US14981124
申请日：2015-12-28
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H01L27/14685
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
-
公开(公告)号：US11417700B2
公开(公告)日：2022-08-16
申请号：US16989706
申请日：2020-08-10
IPC分类号： H01L27/146 , H01L21/768
摘要： Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
-
公开(公告)号：US10157953B2
公开(公告)日：2018-12-18
申请号：US15624055
申请日：2017-06-15
IPC分类号： H01L27/146 , H01L21/768
摘要： Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
-
公开(公告)号：US10074594B2
公开(公告)日：2018-09-11
申请号：US14689707
申请日：2015-04-17
发明人： Li-Yen Fang , Chih-Chang Huang , Jung-Chih Tsao , Yao-Hsiang Liang , Yu-Ku Lin
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768 , H01L25/065 , H01L27/146
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/53238 , H01L25/0657 , H01L25/10 , H01L27/14636 , H01L27/14687 , H01L2224/16145 , H01L2224/16225 , H01L2924/15311
摘要： A semiconductor structure includes a substrate including a first side, a second side opposite to the first side, and a device layer over the second side, and a conductive via extending through the substrate, and including a first portion adjacent to the first side and a second portion adjacent to the device layer, wherein the conductive via includes an interface between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.
-
9.发明申请公开(公告)号：US20170213861A1
公开(公告)日：2017-07-27
申请号：US15483904
申请日：2017-04-10
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H01L27/14685
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
-
公开(公告)号：US09691804B2
公开(公告)日：2017-06-27
申请号：US14689838
申请日：2015-04-17
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L21/76802 , H01L21/76843 , H01L21/76856 , H01L21/76889 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.016 秒)
