Invention Application
US20160118437A1 MANUFACTURING METHOD OF BACK ILLUMINATION CMOS IMAGE SENSOR DEVICE USING WAFER BONDING
有权
背光照明的制造方法CMOS图像传感器器件使用波形焊接
- Patent Title: MANUFACTURING METHOD OF BACK ILLUMINATION CMOS IMAGE SENSOR DEVICE USING WAFER BONDING
- Patent Title (中): 背光照明的制造方法CMOS图像传感器器件使用波形焊接
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Application No.: US14987035Application Date: 2016-01-04
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Publication No.: US20160118437A1Publication Date: 2016-04-28
- Inventor: Kazuyoshi MAEKAWA
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2012-254926 20121121
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
Disclosed is a manufacturing method of a semiconductor device including a step of attaching semiconductor wafers together, in which it is prevented that the bonding strength between the attached semiconductor wafers may be decreased due to a void caused between the two semiconductor wafers. Moisture, etc., adsorbed to the surfaces of the semiconductor wafers is desorbed by performing a heat treatment on the semiconductor wafers after cleaning the surfaces thereof with pure water. Subsequently, after a plasma treatment is performed on the semiconductor wafers, the two semiconductor wafers are attached together. The wafers are firmly bonded together by subjecting to a high-temperature heat treatment.
Public/Granted literature
- US09608034B2 Manufacturing method of back illumination CMOS image sensor device using wafer bonding Public/Granted day:2017-03-28
Information query
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