Invention Application
- Patent Title: APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION APPARATUS USING APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT
- Patent Title (中): 用于控制绝缘栅型半导体元件的装置和使用装置控制绝缘栅型半导体元件的功率转换装置
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Application No.: US14889850Application Date: 2013-05-10
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Publication No.: US20160118891A1Publication Date: 2016-04-28
- Inventor: Takayuki HASHIMOTO , Mutsuhiro MORI
- Applicant: HITACHI, LTD.
- International Application: PCT/JP2013/063102 WO 20130510
- Main IPC: H02M3/158
- IPC: H02M3/158

Abstract:
An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.
Public/Granted literature
Information query
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