Invention Application
US20160118891A1 APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION APPARATUS USING APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT 有权
用于控制绝缘栅型半导体元件的装置和使用装置控制绝缘栅型半导体元件的功率转换装置

  • Patent Title: APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION APPARATUS USING APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT
  • Patent Title (中): 用于控制绝缘栅型半导体元件的装置和使用装置控制绝缘栅型半导体元件的功率转换装置
  • Application No.: US14889850
    Application Date: 2013-05-10
  • Publication No.: US20160118891A1
    Publication Date: 2016-04-28
  • Inventor: Takayuki HASHIMOTOMutsuhiro MORI
  • Applicant: HITACHI, LTD.
  • International Application: PCT/JP2013/063102 WO 20130510
  • Main IPC: H02M3/158
  • IPC: H02M3/158
APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION APPARATUS USING APPARATUS FOR CONTROLLING INSULATING GATE-TYPE SEMICONDUCTOR ELEMENT
Abstract:
An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.
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