Invention Application
- Patent Title: OPERATION/MARGIN ENHANCEMENT FEATURE FOR SURFACE-MEMS STRUCTURE; SCULPTING RAISED ADDRESS ELECTRODE
- Patent Title (中): 表面MEMS结构的操作/增强功能; 扫描地址电极
-
Application No.: US14531842Application Date: 2014-11-03
-
Publication No.: US20160124302A1Publication Date: 2016-05-05
- Inventor: Patrick I. Oden , James C. Baker , Sandra Zheng , William C. McDonald , Lance W. Barron
- Applicant: Texas Instruments Incorporated
- Main IPC: G03F7/00
- IPC: G03F7/00

Abstract:
A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.
Public/Granted literature
- US09864188B2 Operation/margin enhancement feature for surface-MEMS structure; sculpting raised address electrode Public/Granted day:2018-01-09
Information query