Invention Application
US20160124302A1 OPERATION/MARGIN ENHANCEMENT FEATURE FOR SURFACE-MEMS STRUCTURE; SCULPTING RAISED ADDRESS ELECTRODE 有权
表面MEMS结构的操作/增强功能; 扫描地址电极

OPERATION/MARGIN ENHANCEMENT FEATURE FOR SURFACE-MEMS STRUCTURE; SCULPTING RAISED ADDRESS ELECTRODE
Abstract:
A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.
Information query
Patent Agency Ranking
0/0