公开(公告)号：US20160176701A1

公开(公告)日：2016-06-23

申请号：US15044016

申请日：2016-02-15

Applicant: Texas Instruments Incorporated

Inventor： Arun Gupta ,  William C. McDonald ,  Adam Fruehling ,  Ivan Kmecko ,  Lance Barron ,  Divyanshu Agrawal ,  Arthur M. Turner ,  John C. Ehmke ,  James C. Baker

IPC: B81B7/00 ,  B81C1/00

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/0064 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00158 ,  H01G5/011 ,  H01G5/40

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。

公开(公告)号：US09448484B2

公开(公告)日：2016-09-20

申请号：US14531877

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/20 ,  G02B26/08 ,  G03F7/36 ,  G03F7/16

CPC classification number: G03F7/36 ,  B81B3/00 ,  G02B26/0841 ,  G03F7/16 ,  G03F7/20

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract translation: 通过在衬底上沉积光致抗蚀剂隔离层来形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将光致抗蚀剂间隔层暴露于灰度级光刻掩模以形成光致抗蚀剂间隔层的上表面。 控制构件形成在成形间隔层上，并且具有被配置为使能量密度最大化的倾斜部分。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。

公开(公告)号：US09864188B2

公开(公告)日：2018-01-09

申请号：US14531842

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/20 ,  G02B26/08 ,  B81B3/00

CPC classification number: G02B26/0841 ,  B81B3/00

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

公开(公告)号：US09340415B2

公开(公告)日：2016-05-17

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。

公开(公告)号：US20160124311A1

公开(公告)日：2016-05-05

申请号：US14531877

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/36 ,  G03F7/16 ,  G03F7/20 ,  G02B26/08

CPC classification number: G03F7/36 ,  B81B3/00 ,  G02B26/0841 ,  G03F7/16 ,  G03F7/20

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract translation: 通过在衬底上沉积光致抗蚀剂隔离层来形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将光致抗蚀剂间隔层暴露于灰度级光刻掩模以形成光致抗蚀剂间隔层的上表面。 控制构件形成在成形间隔层上，并且具有被配置为使能量密度最大化的倾斜部分。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。

公开(公告)号：US20160124302A1

公开(公告)日：2016-05-05

申请号：US14531842

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Patrick I. Oden ,  James C. Baker ,  Sandra Zheng ,  William C. McDonald ,  Lance W. Barron

IPC: G03F7/00

CPC classification number: G02B26/0841 ,  B81B3/00

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Abstract translation: 通过形成具有非平面上表面的衬底以及在衬底上沉积光致抗蚀剂间隔层，形成诸如DMD型像素的微机电系统（MEMS）像素的方法。 将间隔层暴露于灰度级光刻掩模以形成间隔层的上表面。 在平坦化的间隔层上形成控制构件，并且在控制构件上形成图像构件。 图像构件被配置为根据控制构件定位以形成空间光调制器（SLM）。 通过用灰度光刻掩模掩蔽间隔层的选定部分来平坦化间隔层，以去除所选部分中的杂环。

公开(公告)号：US20150266727A1

公开(公告)日：2015-09-24

申请号：US14661830

申请日：2015-03-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James C. Baker ,  Patrick I. Oden ,  Robert S. Black

IPC: B81C1/00

CPC classification number: B81C1/00626 ,  B81B3/001 ,  B81B3/007 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/00198 ,  B81C1/00404 ,  B81C2201/0198

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract translation: MEMS器件形成有轮廓基底和具有互补轮廓的材料层的相对表面。 在一种制造方法中，在衬底上形成第一光致抗蚀剂层。 使用图案掩模使第一光致抗蚀剂层的选定区域曝光。 第一光致抗蚀剂层的曝光区域被热收缩以用轮廓图案化第一光致抗蚀剂层。 在成型的第一光致抗蚀剂层上形成一层材料。