Invention Application
US20160125948A1 SENSE AMPLIFICATION CIRCUITS, OUTPUT CIRCUITS, NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS, MEMORY CARDS HAVING THE SAME, AND DATA OUTPUTTING METHODS THEREOF
审中-公开
感应放大电路，输出电路，非易失性存储器件，存储器系统，具有该存储器的存储卡及其数据输出方法
- Patent Title: SENSE AMPLIFICATION CIRCUITS, OUTPUT CIRCUITS, NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS, MEMORY CARDS HAVING THE SAME, AND DATA OUTPUTTING METHODS THEREOF
- Patent Title (中): 感应放大电路，输出电路，非易失性存储器件，存储器系统，具有该存储器的存储卡及其数据输出方法
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Application No.: US14993464Application Date: 2016-01-12
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Publication No.: US20160125948A1Publication Date: 2016-05-05
- Inventor: Taesung LEE , Jaewoo IM
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2011-0042986 20110506
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/08
Abstract:
An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.
Information query
