Invention Application
- Patent Title: CLEANING PROCESS FOR OXIDE
- Patent Title (中): 氧化物清洗工艺
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Application No.: US14532015Application Date: 2014-11-04
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Publication No.: US20160126091A1Publication Date: 2016-05-05
- Inventor: Ted Ming-Lang Guo , Chin-Cheng Chien , Chueh-Yang Liu , Neng-Hui Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311
Abstract:
A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the substrate of the first area and the second area. An ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process is performed on the first oxide layer of the first area and the second area. A photoresist layer covers the first oxide layer of the first area while exposing the first oxide layer of the second area. The first oxide layer of the second area is removed. The photoresist layer is then removed.
Public/Granted literature
- US09466480B2 Cleaning process for oxide Public/Granted day:2016-10-11
Information query
IPC分类:
